********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Mar 24, 2014
*ECN S14-0620, Rev. A
*File Name: SiS439DNT_PS.txt, SiS439DNT_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiS439DNT D G S 
M1 3 GX S S PMOS W= 5400000u L= 0.25u 
M2 S GX S D NMOS W= 5400000u L= 0.42u
R1 D 3 6.642e-03 TC=3.562e-03, 4.752e-06 
CGS GX S 8.563e-10 
CGD GX D 1.057e-10 
RG G GY 1.8
RTCV 100 S 1e6 TC=3.480e-04, 3.285e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 5400000u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 2.524e-06 NSUB = 3.544e+16 
+ KAPPA = 1.000e-06 NFS = 5.695e+11 
+ LD = 0 IS = 0 TPG = -1 ) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.872e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.256e-08 T_MEASURED = 25 BV = 31 
+RS = 4.475e-03 N = 1.297e+00 IS = 1.066e-10 
+EG = 1.238e+00 XTI = -1.184e+00 TRS1 = 3.173e-03 
+CJO = 8.152e-11 VJ = 3.560e-01 M = 5.362e-01 ) 
.ENDS 
